A numerical study of thermal characteristics such as temperature distribution, velocity field, streamline, Peclet numbers and Reynolds numbers in silicon Melting is carried out for directional solidification crystal growth processes. One of the greatest technological and scientific challenges in growing multicrystalline silicon is achieving homogeneity in the material properties of the grown crystal. It is affected by fluctuations in the growth rate of the crystal. One possible cause of growth rate fluctuations is unsteady convection in the melt. The objective is to examine the influence of the thermal convection effect in the bath. Dimensionless numbers are of paramount importance in the parametric analysis of the complex nonlinear transport phenomena of the bulk silicon growth process. They are also extremely useful for understanding heat and mass transfer from fluid flow onto molten silicon during solidification processes. The flow pattern influences crystal quality through convective heat and mass transport. The calculations are carried out in a symmetrical 2D/3D axis model using the finite element technique. The results indicate that thermal forces have a significant effect on the flow of molten silicon. The simulation results are reasonably in agreement with the predictions of the theoretical approach. Keywords: Simulation and modeling; Thermal analysis; Navier-Stokes equations; Solar energy materials; Finite element analysis;1. INTRODUCTIONThe unsustainable nature of fossil fuels as an energy source, in terms of their future availability and environmental impact, has sparked interest in the diversification of energy sources, with particular interest in renewable energy . The photovoltaic (PV) industry is a player...... middle of article ......anesh, Satoshi Nakano et.al, Effect of crucible rotation on oxygen concentration during the process of unidirectional solidification of multicrystalline silicon for solar cells, Journal of Crystal Growth 311 (2009) 1123-1128[11] Balaji Devulapalli and Milind S. Kulkarni, Modeling the growth of multicrystalline silicon in directional solidification systems, ECS Transactions, 18 ( 1) 1023-1029 (2009).[12] Sudheer M. Pimputkar and Simon Ostrach, Convective effects in fused crystals., JournalofCrystalGrowth 55 (1981) 614—646.[13] http://www.comsol.co.in/support/books[14] M.Nacati Ozisik, Heat transfer (a basic approach), McGraw-Hill book company, New York, 1985.[15] L. Braescu and TF George, Critical Marangoni numbers and their effect on dopant distribution in silicon fibers, Int. Jou.of.Mathematical models and methods in applied sciences, Number 3, Volume 2, 2008.