Multiple ion beam sputtering technique can be used to successfully manufacture ferroelectric lead zirconate titanate (PZT). This technique is very advantageous as the current and voltage of the ion beam can be tailored, allowing the flux density and energy of the sprayed materials to be controlled. This technique also offers lower operating pressures during deposition, controllable deposition and exceptional uniformity over larger areas, reproducibility and localized plasma within an ion source. Ion beam sputtering is an excellent growth technique and has been widely used to deposit oxide films and semiconductors. But this method has mainly been used to deposit single element oxides and not multi-element compounds such as ferroelectrics like PZT. This is likely due to the lack of uniformity, reproducibility, and stoichiometry control during the deposition of multi-elemental compounds. An experiment was conducted at the Materials Research Laboratory at Pennsylvania State University, University Park, using a multi-ion beam technique to deposit PZT onto various unheated media. In the experiment, a multiple ion beam sputtering system was used to sputter PZT from distinct metals such as Pb, Zr, and Ti. This system provides uniformity over large areas and stoichiometry control since the PZT has been split into unique elemental compounds. In the experiment, the three metal targets, Pb, Zr and Ti, were placed on adjustable stands. The holders were designed to be flexible and adjustable so that they could be placed in any position relative to the ion beam. Three primary ion sources were focused and adjusted to the targets. The targets were placed at a distance of approximately 11–16 cm from the ion source and a shutter was placed in the middle of the paper, but when the annealing time was set to 20 s, the films maintained a pure perovskite phase. . The conventional oven annealing process produced a mixture of pyrochlore and perovskite crystals at 600 °C with an annealing time of 2 h. When the PZT films were annealed at 650 °C for 2 h, all films exhibited pure perovskite crystal structures. The Pb content also has an effect on the crystallization of the PZT film. It was determined that excess PZT increased crystallization toward the perovskite phase. Although excess Pb increases crystallization, it worsens the morphology. PZT films deposited with excess Pb tend to have a rougher surface. Works CitedMulti-beam reactive ion sputtering deposition of Pb(Zr,Ti)O3S ferroelectric thin films. B. Krupanidhi, H. Hu and V. KumarMaterials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802